Some transistor-based components, including amplifiers, require transistors with different switch-on voltages. Usually, this implies different materials or dimensions, and requires complex patterning methods. We are developing methods of imparting static charge to the transistors during the device fabrication so that transistors with the same materials and dimensions can serve different functions in circuits. We utilize extremely hydrophobic dielectrics and semiconductors to maximize environmental stability of the voltage shifts. This work is a collaboration with Professors James West and Andreas Andreou of the Department of Electrical Engineering.
Tuning semiconductor device properties with static charge
2Highlights From this ResearchTuning semiconductor device properties with static charge
Tuning of threshold voltage in organic field-effect transistors
We report organic field-effect transistors (OFETs) with the hydrophobic gate dielectric exposed to an electron beam before semiconductor deposition, shifting the threshold voltage toward positive gate bias for a p-channel…
Field-effect-tuned lateral organic diodes
Lateral p-n junctions were fabricated using a novel technique and the surface potentials near the junction were evaluated. The addition of a third gate terminal allowed for further modification of…