Sodium β-alumina (SBA)-based gate dielectric films have been developed for all solution-processed, transparent and low voltage field-effect transistors (FETs). The dielectric and morphological properties of sol–gel-derived SBA films…
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Sodium β-alumina (SBA)-based gate dielectric films have been developed for all solution-processed, transparent and low voltage field-effect transistors (FETs). The dielectric and morphological properties of sol–gel-derived SBA films…
The diffusion of point defects in silicon at high densities can involve complex coordinated motion of dopants and vacancies. We are developing new algorithms to speed the simulation of these…
Recently, the amorphous Sodium beta-alumina (SBA: Na-Beta-Al2O3) [1] with high-dielectric-constant and novel frequency-dependence transport properties has been regarded as a potential candidate for the gate dielectrics of field-effect transistors (FETs).…
Dr. Jonah Erlebacher presented as part of the Whiting School of Engineering's Donald P. Giddens Inaugural Professorial Lecture Series.
Featured 07Study into breakdowns in metallic glass by researchers in Johns Hopkins' Department of Materials Science & Engineering published in the journal Physical Review Letters.
Featured 05Take a look back at Johns Hopkins University's 2013 commencement.
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Professor, Materials Science and Engineering
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